Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure

Wen Yu Lin*, Dong Sing Wuu, Shih Cheng Huang, Shih Yung Lo, Chien Min Liu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Pérot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 μA because the STOM array can act as scattering centers to enhance the light extraction.

Original languageEnglish
Article number5871684
Pages (from-to)1240-1242
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number17
DOIs
StatePublished - 22 Aug 2011

Keywords

  • Fabry-Pérot
  • InGaN
  • light-emitting diode (LED)
  • oxide

Fingerprint

Dive into the research topics of 'Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure'. Together they form a unique fingerprint.

Cite this