Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure

Wen Yu Lin; Dong Sing Wuu; Shih Cheng Huang; Shih Yung Lo; Chien Min Liu; Ray-Hua Horng

doi:10.1109/LPT.2011.2158992

Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure

Wen Yu Lin^*, Dong Sing Wuu, Shih Cheng Huang, Shih Yung Lo, Chien Min Liu, Ray-Hua Horng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Pérot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 μA because the STOM array can act as scattering centers to enhance the light extraction.

Original language	English
Article number	5871684
Pages (from-to)	1240-1242
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2011.2158992
State	Published - 22 Aug 2011

Keywords

Fabry-Pérot
InGaN
light-emitting diode (LED)
oxide

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10.1109/LPT.2011.2158992

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title = "Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure",

abstract = "A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-P{\'e}rot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 μA because the STOM array can act as scattering centers to enhance the light extraction.",

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author = "Lin, {Wen Yu} and Wuu, {Dong Sing} and Huang, {Shih Cheng} and Lo, {Shih Yung} and Liu, {Chien Min} and Ray-Hua Horng",

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AU - Lin, Wen Yu

AU - Wuu, Dong Sing

AU - Huang, Shih Cheng

AU - Lo, Shih Yung

AU - Liu, Chien Min

AU - Horng, Ray-Hua

PY - 2011/8/22

Y1 - 2011/8/22

N2 - A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Pérot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 μA because the STOM array can act as scattering centers to enhance the light extraction.

AB - A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Pérot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 μA because the STOM array can act as scattering centers to enhance the light extraction.

KW - Fabry-Pérot

KW - InGaN

KW - light-emitting diode (LED)

KW - oxide

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Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure

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