@inproceedings{a8d2f67142ad41dda10eb5510d7591a1,
title = "Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V",
abstract = "In this work, GaN power Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) have been fabricated using GaN-on-QST substrate with only SiON dielectric (Device A) and GaN-on-Si substrate with in-situ SiN/SiON dielectric (Device B).",
keywords = "GaN power device, GaN-on-QST, MIS-HEMTs",
author = "Liu, {Chia Wei} and Liu, {Yen Wei} and Ho, {Hsin Jou} and Wu, {Tian Li}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",
year = "2023",
doi = "10.1109/WiPDAAsia58218.2023.10261913",
language = "English",
series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
address = "美國",
}