Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment

Tzu Heng Lin; You Shiun Chou; Hung Chun Chen; Tian Li Wu

doi:10.1109/WiPDAAsia58218.2023.10261916

Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment

Tzu Heng Lin^*, You Shiun Chou, Hung Chun Chen, Tian Li Wu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this work, the surface of the p-GaN gate is treated by the oxygen plasma in p-GaN HMETs to form the MgO, suggested by the XPS analysis. Due to formation of wide bandgap MgO layer, the gate leakage can be suppressed and gate breakdown can be enhanced. The p-GaN HEMTs treated by the oxygen plasma treatment exhibit more than 1000V breakdown voltage and robust forward gate TDDB capability.

Original language	English
Title of host publication	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350337112
DOIs	https://doi.org/10.1109/WiPDAAsia58218.2023.10261916
State	Published - 2023
Event	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan Duration: 27 Aug 2023 → 29 Aug 2023

Publication series

Name	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Country/Territory	Taiwan
City	Hsinchu
Period	27/08/23 → 29/08/23

Access to Document

10.1109/WiPDAAsia58218.2023.10261916

Cite this

Lin, T. H., Chou, Y. S., Chen, H. C., & Wu, T. L. (2023). Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment. In WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia58218.2023.10261916

Lin, Tzu Heng ; Chou, You Shiun ; Chen, Hung Chun et al. / Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

@inproceedings{02d19cd33d7042bb8f80e5420b879ebf,

title = "Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment",

abstract = "In this work, the surface of the p-GaN gate is treated by the oxygen plasma in p-GaN HMETs to form the MgO, suggested by the XPS analysis. Due to formation of wide bandgap MgO layer, the gate leakage can be suppressed and gate breakdown can be enhanced. The p-GaN HEMTs treated by the oxygen plasma treatment exhibit more than 1000V breakdown voltage and robust forward gate TDDB capability.",

author = "Lin, {Tzu Heng} and Chou, {You Shiun} and Chen, {Hung Chun} and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",

year = "2023",

doi = "10.1109/WiPDAAsia58218.2023.10261916",

language = "English",

series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美國",

}

Lin, TH, Chou, YS, Chen, HC & Wu, TL 2023, Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment. in WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023, Hsinchu, Taiwan, 27/08/23. https://doi.org/10.1109/WiPDAAsia58218.2023.10261916

Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment. / Lin, Tzu Heng; Chou, You Shiun; Chen, Hung Chun et al.
WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment

AU - Lin, Tzu Heng

AU - Chou, You Shiun

AU - Chen, Hung Chun

AU - Wu, Tian Li

PY - 2023

Y1 - 2023

N2 - In this work, the surface of the p-GaN gate is treated by the oxygen plasma in p-GaN HMETs to form the MgO, suggested by the XPS analysis. Due to formation of wide bandgap MgO layer, the gate leakage can be suppressed and gate breakdown can be enhanced. The p-GaN HEMTs treated by the oxygen plasma treatment exhibit more than 1000V breakdown voltage and robust forward gate TDDB capability.

AB - In this work, the surface of the p-GaN gate is treated by the oxygen plasma in p-GaN HMETs to form the MgO, suggested by the XPS analysis. Due to formation of wide bandgap MgO layer, the gate leakage can be suppressed and gate breakdown can be enhanced. The p-GaN HEMTs treated by the oxygen plasma treatment exhibit more than 1000V breakdown voltage and robust forward gate TDDB capability.

UR - http://www.scopus.com/inward/record.url?scp=85174313216&partnerID=8YFLogxK

U2 - 10.1109/WiPDAAsia58218.2023.10261916

DO - 10.1109/WiPDAAsia58218.2023.10261916

M3 - Conference contribution

AN - SCOPUS:85174313216

T3 - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023

Y2 - 27 August 2023 through 29 August 2023

ER -

Lin TH, Chou YS, Chen HC, Wu TL. Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment. In WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia58218.2023.10261916

Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment

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