Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer

Hui Hsuan Li, Shang Chiun Chen, Yu Hsien Lin, Chao Hsin Chien*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.

Original languageEnglish
Title of host publicationProceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
EditorsFan Ye, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665469067
DOIs
StatePublished - 2022
Event16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 - Nanjing, China
Duration: 25 Oct 202228 Oct 2022

Publication series

NameProceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

Conference

Conference16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Country/TerritoryChina
CityNanjing
Period25/10/2228/10/22

Keywords

  • Germanium
  • germanium oxide (GeO)
  • hafnium (Hf)
  • in situ
  • interfacial layer (IL)
  • pMOSFET
  • plasma-enhanced atomic layer deposition (PEALD)

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