Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer

Hui Hsuan Li; Shang Chiun Chen; Yu Hsien Lin; Chao Hsin Chien

doi:10.1109/ICSICT55466.2022.9963383

Demonstration of HfO₂-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer

Hui Hsuan Li, Shang Chiun Chen, Yu Hsien Lin, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.

Original language	English
Title of host publication	Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Editors	Fan Ye, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665469067
DOIs	https://doi.org/10.1109/ICSICT55466.2022.9963383
State	Published - 2022
Event	16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 - Nanjing, China Duration: 25 Oct 2022 → 28 Oct 2022

Publication series

Name	Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

Conference

Conference	16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Country/Territory	China
City	Nanjing
Period	25/10/22 → 28/10/22

Keywords

Germanium
germanium oxide (GeO)
hafnium (Hf)
in situ
interfacial layer (IL)
plasma-enhanced atomic layer deposition (PEALD)
pMOSFET

Access to Document

10.1109/ICSICT55466.2022.9963383

Cite this

Li, H. H., Chen, S. C., Lin, Y. H., & Chien, C. H. (2022). Demonstration of HfO₂-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer. In F. Ye, & T-A. Tang (Eds.), Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT55466.2022.9963383

Li, Hui Hsuan ; Chen, Shang Chiun ; Lin, Yu Hsien et al. / Demonstration of HfO₂-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer. Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. editor / Fan Ye ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022).

@inproceedings{a8081cbe517348d788664d85ab67048c,

title = "Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer",

abstract = "In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.",

keywords = "Germanium, germanium oxide (GeO), hafnium (Hf), in situ, interfacial layer (IL), plasma-enhanced atomic layer deposition (PEALD), pMOSFET",

author = "Li, {Hui Hsuan} and Chen, {Shang Chiun} and Lin, {Yu Hsien} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 ; Conference date: 25-10-2022 Through 28-10-2022",

year = "2022",

doi = "10.1109/ICSICT55466.2022.9963383",

language = "English",

series = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Fan Ye and Ting-Ao Tang",

booktitle = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",

address = "United States",

}

Li, HH, Chen, SC, Lin, YH & Chien, CH 2022, Demonstration of HfO₂-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer. in F Ye & T-A Tang (eds), Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, Institute of Electrical and Electronics Engineers Inc., 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, Nanjing, China, 25/10/22. https://doi.org/10.1109/ICSICT55466.2022.9963383

Demonstration of HfO₂-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer. / Li, Hui Hsuan; Chen, Shang Chiun; Lin, Yu Hsien et al.
Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. ed. / Fan Ye; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer

AU - Li, Hui Hsuan

AU - Chen, Shang Chiun

AU - Lin, Yu Hsien

AU - Chien, Chao Hsin

PY - 2022

Y1 - 2022

N2 - In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.

AB - In this work, we investigated a continuous fabrication method for Hf-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) with adding Hafnium atom into GeOx interfacial layer (IL) through in situ plasma-enhanced atomic layer deposition (PEALD). The results revealed that the accumulation capacitance exhibited no significant increase in the capacitance-voltage (CV) curves due to the decreased GeO volatilization. Simultaneously, through X-ray photoelectron spectroscopy (XPS), we observed that adding Hf into GeOx IL showed a higher GeO content than pure GeOx IL. Therefore, adding Hf into GeOx IL method could attain an ultralow interface trap density (Dit) of approximately 2 × 1011 eV-1 cm-2, a record low gate leakage current of 9 × 10-5 A/cm2 under PMA 500 °C. In addition, the Ge pMOSFET with adding Hf into GeOx IL at PMA 500 °C exhibited an effective peak hole mobility of 138 cm2/V•s owing to less coulomb scattering.

KW - Germanium

KW - germanium oxide (GeO)

KW - hafnium (Hf)

KW - in situ

KW - interfacial layer (IL)

KW - plasma-enhanced atomic layer deposition (PEALD)

KW - pMOSFET

UR - http://www.scopus.com/inward/record.url?scp=85143963842&partnerID=8YFLogxK

U2 - 10.1109/ICSICT55466.2022.9963383

DO - 10.1109/ICSICT55466.2022.9963383

M3 - Conference contribution

AN - SCOPUS:85143963842

T3 - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

BT - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

A2 - Ye, Fan

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

Y2 - 25 October 2022 through 28 October 2022

ER -

Li HH, Chen SC, Lin YH, Chien CH. Demonstration of HfO₂-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer. In Ye F, Tang T-A, editors, Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022). doi: 10.1109/ICSICT55466.2022.9963383