Demonstration of HfO2-Based Gate Dielectric with 0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2by Trimethylaluminum Pre-Treatment and Al Scavenger

Meng Chien Lee, Wei Lun Chen, Yi Yang Zhao, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien*

*Corresponding author for this work

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