Demonstration of HfO 2 -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

Yi He Tsai, Chen Han Chou, Yun Yan Chung, Wen Kuan Yeh, Yu Hsien Lin, Fu-Hsiang Ko, Chao-Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

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