Demonstration of HfO 2 -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

Yi He Tsai; Chen Han Chou; Yun Yan Chung; Wen Kuan Yeh; Yu Hsien Lin; Fu-Hsiang Ko; Chao-Hsin Chien

doi:10.1109/LED.2018.2887090

Demonstration of HfO ₂ -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

Yi He Tsai, Chen Han Chou, Yun Yan Chung, Wen Kuan Yeh, Yu Hsien Lin, Fu-Hsiang Ko, Chao-Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

HfO₂-based gate stacks with titanium (Ti) incorporated into a GeO_x interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contributed to achievement of an equivalent oxide thickness of approximately 0.8 nm, a low interface states density Dit of approximately 2.5 ×,1011 eV - 1 cm - 2, and a smaller Dit increment of approximately 1 × 1011eV-1 cm -2 after constant negative voltage stress at a field of 8 MV/cm. Therefore, Ti is appropriate for improving the quality of GeO_x through high temperature annealing.

Original language	English
Article number	8579236
Pages (from-to)	174-176
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	40
Issue number	2
DOIs	https://doi.org/10.1109/LED.2018.2887090
State	Published - Feb 2019

Keywords

Constant voltage stress (CVS)
germanium
germanium oxide (GeO)
hafnium oxide (HfO)
titanium (Ti)

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10.1109/LED.2018.2887090

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title = "Demonstration of HfO 2 -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer",

abstract = "HfO2-based gate stacks with titanium (Ti) incorporated into a GeOx interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contributed to achievement of an equivalent oxide thickness of approximately 0.8 nm, a low interface states density Dit of approximately 2.5 ×,1011 eV - 1 cm - 2, and a smaller Dit increment of approximately 1 × 1011eV-1 cm -2 after constant negative voltage stress at a field of 8 MV/cm. Therefore, Ti is appropriate for improving the quality of GeOx through high temperature annealing.",

keywords = "Constant voltage stress (CVS), germanium, germanium oxide (GeO), hafnium oxide (HfO), titanium (Ti)",

author = "Tsai, {Yi He} and Chou, {Chen Han} and Chung, {Yun Yan} and Yeh, {Wen Kuan} and Lin, {Yu Hsien} and Fu-Hsiang Ko and Chao-Hsin Chien",

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year = "2019",

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doi = "10.1109/LED.2018.2887090",

language = "English",

volume = "40",

pages = "174--176",

journal = "Ieee Electron Device Letters",

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T1 - Demonstration of HfO 2 -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

AU - Tsai, Yi He

AU - Chou, Chen Han

AU - Chung, Yun Yan

AU - Yeh, Wen Kuan

AU - Lin, Yu Hsien

AU - Ko, Fu-Hsiang

AU - Chien, Chao-Hsin

PY - 2019/2

Y1 - 2019/2

N2 - HfO2-based gate stacks with titanium (Ti) incorporated into a GeOx interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contributed to achievement of an equivalent oxide thickness of approximately 0.8 nm, a low interface states density Dit of approximately 2.5 ×,1011 eV - 1 cm - 2, and a smaller Dit increment of approximately 1 × 1011eV-1 cm -2 after constant negative voltage stress at a field of 8 MV/cm. Therefore, Ti is appropriate for improving the quality of GeOx through high temperature annealing.

AB - HfO2-based gate stacks with titanium (Ti) incorporated into a GeOx interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contributed to achievement of an equivalent oxide thickness of approximately 0.8 nm, a low interface states density Dit of approximately 2.5 ×,1011 eV - 1 cm - 2, and a smaller Dit increment of approximately 1 × 1011eV-1 cm -2 after constant negative voltage stress at a field of 8 MV/cm. Therefore, Ti is appropriate for improving the quality of GeOx through high temperature annealing.

KW - Constant voltage stress (CVS)

KW - germanium

KW - germanium oxide (GeO)

KW - hafnium oxide (HfO)

KW - titanium (Ti)

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DO - 10.1109/LED.2018.2887090

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JO - Ieee Electron Device Letters

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Demonstration of HfO ₂ -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

Abstract

Keywords

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