Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

Tian Li Wu; Yang Yan Tseng; Chih Fang Huang; Zih Sin Chen; Chih Chien Lin; Chung Jen Chung; Po Kai Huang; Kuo Hsing Kao

doi:10.1109/WiPDAAsia.2019.8760323

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer

Tian Li Wu, Yang Yan Tseng, Chih Fang Huang, Zih Sin Chen, Chih Chien Lin, Chung Jen Chung, Po Kai Huang, Kuo Hsing Kao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al₂O₃ interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al₂O₃ layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al₂O₃ IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al₂O₃ IL is 10³ times higher the one without an Al₂O₃ IL. This proves that inserting an Al₂O₃ IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10^-4 Ω.cm² is demonstrated in the MIS contact with 1nm Al₂O₃ IL.

Original language	English
Title of host publication	WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728121451
DOIs	https://doi.org/10.1109/WiPDAAsia.2019.8760323
State	Published - May 2019
Event	2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan Duration: 23 May 2019 → 25 May 2019

Publication series

Name	WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
Country/Territory	Taiwan
City	Taipei
Period	23/05/19 → 25/05/19

Keywords

Fermi level pinning
Gan
Mis contact

Access to Document

10.1109/WiPDAAsia.2019.8760323

Cite this

Wu, T. L., Tseng, Y. Y., Huang, C. F., Chen, Z. S., Lin, C. C., Chung, C. J., Huang, P. K., & Kao, K. H. (2019). Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. In WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia Article 8760323 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2019.8760323

Wu, Tian Li ; Tseng, Yang Yan ; Huang, Chih Fang et al. / Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

@inproceedings{3481de8943174c9ea85cc09b5acbec47,

title = "Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer",

abstract = "In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.",

keywords = "Fermi level pinning, Gan, Mis contact",

author = "Wu, {Tian Li} and Tseng, {Yang Yan} and Huang, {Chih Fang} and Chen, {Zih Sin} and Lin, {Chih Chien} and Chung, {Chung Jen} and Huang, {Po Kai} and Kao, {Kuo Hsing}",

year = "2019",

month = may,

doi = "10.1109/WiPDAAsia.2019.8760323",

language = "English",

series = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美國",

note = "2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 ; Conference date: 23-05-2019 Through 25-05-2019",

}

Wu, TL, Tseng, YY, Huang, CF, Chen, ZS, Lin, CC, Chung, CJ, Huang, PK & Kao, KH 2019, Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. in WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia., 8760323, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019, Taipei, Taiwan, 23/05/19. https://doi.org/10.1109/WiPDAAsia.2019.8760323

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. / Wu, Tian Li; Tseng, Yang Yan; Huang, Chih Fang et al.
WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. 8760323 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

AU - Wu, Tian Li

AU - Tseng, Yang Yan

AU - Huang, Chih Fang

AU - Chen, Zih Sin

AU - Lin, Chih Chien

AU - Chung, Chung Jen

AU - Huang, Po Kai

AU - Kao, Kuo Hsing

PY - 2019/5

Y1 - 2019/5

N2 - In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

AB - In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al2O3 IL is 103 times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10-4 Ω.cm2 is demonstrated in the MIS contact with 1nm Al2O3 IL.

KW - Fermi level pinning

KW - Gan

KW - Mis contact

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U2 - 10.1109/WiPDAAsia.2019.8760323

DO - 10.1109/WiPDAAsia.2019.8760323

M3 - Conference contribution

AN - SCOPUS:85070313703

T3 - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

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Wu TL, Tseng YY, Huang CF, Chen ZS, Lin CC, Chung CJ et al. Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer. In WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2019. 8760323. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia.2019.8760323