Abstract
For high-volume manufacturing of 2-D transistors, area-selective chemical reaction deposition (CVD) growth is able to provide good-quality 2-D layers and may be more effective than exfoliation from bulk crystals or wet/dry transfer of large-area as-grown 2-D layers. We have successfully grown continuous and uniform WS2 film comprising around seven layers by area-selective CVD approach using patterned tungsten source/drain metals as the seeds. The growth mechanism is inferred and supported by the transmission electron microscope (TEM) images, as well. The first top-gate MOSFETs of CVD-WS2 channels on SiOx/Si substrates are demonstrated to have good short channel electrical characteristics: ON-/OFF-ratio of 106, a subthreshold swing of 97 mV/decade, and nearly zero drain-induced barrier lowering (DIBL).
Original language | English |
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Article number | 8889483 |
Pages (from-to) | 5381-5386 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 66 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2019 |
Keywords
- Area selective chemical reaction deposition (CVD)
- p-MOSFET
- short channel device
- tungsten disulfide
- WS2