Degradation of laser-crystallized laterally grown poly-Si TFT under dynamic stress

Po-Tsun Liu; Hau Yan Lu; Yu Cheng Chen; Sien Chi

doi:10.1109/LED.2007.895388

Degradation of laser-crystallized laterally grown poly-Si TFT under dynamic stress

Po-Tsun Liu^*, Hau Yan Lu, Yu Cheng Chen, Sien Chi

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show the serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance-voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique.

Original language	English
Pages (from-to)	401-403
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	28
Issue number	5
DOIs	https://doi.org/10.1109/LED.2007.895388
State	Published - May 2007

Keywords

Dynamic stress
Poly-Si
Protrusion grain boundary
Thin-film transistor (TFT)

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10.1109/LED.2007.895388

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title = "Degradation of laser-crystallized laterally grown poly-Si TFT under dynamic stress",

abstract = "This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show the serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance-voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique.",

keywords = "Dynamic stress, Poly-Si, Protrusion grain boundary, Thin-film transistor (TFT)",

author = "Po-Tsun Liu and Lu, {Hau Yan} and Chen, {Yu Cheng} and Sien Chi",

year = "2007",

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doi = "10.1109/LED.2007.895388",

language = "English",

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journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Degradation of laser-crystallized laterally grown poly-Si TFT under dynamic stress

AU - Liu, Po-Tsun

AU - Lu, Hau Yan

AU - Chen, Yu Cheng

AU - Chi, Sien

PY - 2007/5

Y1 - 2007/5

N2 - This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show the serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance-voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique.

AB - This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show the serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance-voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique.

KW - Dynamic stress

KW - Poly-Si

KW - Protrusion grain boundary

KW - Thin-film transistor (TFT)

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EP - 403

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JF - Ieee Electron Device Letters

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Degradation of laser-crystallized laterally grown poly-Si TFT under dynamic stress

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Keywords

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