Degradation of InGaN/GaN LEDs under forward-bias operations in salty water vapor

Hsiang Chen; Kun Min Hsieh; Yun Yang He; Li Chen Chu; Ming Ling Lee; Kow-Ming Chang

doi:10.14447/jnmes.v19i1.340

Degradation of InGaN/GaN LEDs under forward-bias operations in salty water vapor

Hsiang Chen^*, Kun Min Hsieh, Yun Yang He, Li Chen Chu, Ming Ling Lee, Kow-Ming Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.

Original language	English
Pages (from-to)	7-10
Number of pages	4
Journal	Journal of New Materials for Electrochemical Systems
Volume	19
Issue number	1
DOIs	https://doi.org/10.14447/jnmes.v19i1.340
State	Published - 1 Jan 2016

Keywords

Au diffussion
Corrosion
Forward-bias
Green InGaN/GaN LED
Salty water vapor

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.14447/jnmes.v19i1.340

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abstract = "Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.",

keywords = "Au diffussion, Corrosion, Forward-bias, Green InGaN/GaN LED, Salty water vapor",

author = "Hsiang Chen and Hsieh, {Kun Min} and He, {Yun Yang} and Chu, {Li Chen} and Lee, {Ming Ling} and Kow-Ming Chang",

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T1 - Degradation of InGaN/GaN LEDs under forward-bias operations in salty water vapor

AU - Chen, Hsiang

AU - Hsieh, Kun Min

AU - He, Yun Yang

AU - Chu, Li Chen

AU - Lee, Ming Ling

AU - Chang, Kow-Ming

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.

AB - Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.

KW - Au diffussion

KW - Corrosion

KW - Forward-bias

KW - Green InGaN/GaN LED

KW - Salty water vapor

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JF - Journal of New Materials for Electrochemical Systems

IS - 1

ER -

Degradation of InGaN/GaN LEDs under forward-bias operations in salty water vapor

Abstract

Keywords

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