Defect Inspection Techniques in SiC

Po Chih Chen, Wen Chien Miao, Tanveer Ahmed, Yi Yu Pan, Chun Liang Lin, Shih Chen Chen, Hao Chung Kuo, Bing Yue Tsui, Der Hsien Lien*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

Abstract

With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

Original languageEnglish
Article number30
JournalNanoscale Research Letters
Volume17
Issue number1
DOIs
StatePublished - 2022

Keywords

  • Defect inspection technology
  • Killer defect
  • SiC

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