Defect Engineering in Ambipolar Layered Materials for Mode-Regulable Nociceptor

Mengjiao Li, Feng-Shou Yang, Hung-Chang Hsu, Wan-Hsin Chen, Chia Nung Kuo, Jiann-Yeu Chen, Shao-Heng Yang, Ting-Hsun Yang, Che-Yi Lin, Yi Chou, Mu-Pai Lee, Yuan-Ming Chang, Yung-Cheng Yang, Ko-Chun Lee, Yi-Chia Chou, Chen-Hsin Lien, Chun-Liang Lin, Ya-Ping Chiu, Chin Shan Lue, Shu-Ping LinYen-Fu Lin

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping-induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe2) transistor is demonstrated by manipulating its adatom-vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors.

Original languageEnglish
Article number2007587
Number of pages11
JournalAdvanced Functional Materials
StateE-pub ahead of print - 26 Oct 2020


  • adaptation
  • carrier modulation
  • defect engineering
  • PdSe
  • (2)
  • photo nociceptor
  • WSE2


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