Defect-engineered room temperature negative differential resistance in monolayer MoS₂ transistors

Keyphrases

• Room Temperature 100%
• Monolayer MoS2 Transistors 100%
• Negative Differential Resistance 100%
• Defect-engineered 100%
• S Vacancy 66%
• Monolayer MoS2 50%
• MoS2 Field Effect Transistors 33%
• Vacancy Defects 33%
• As-grown 16%
• Sulfur 16%
• Molybdenite 16%
• Field-effect Transistors 16%
• Light Intensity 16%
• Semiconductors 16%
• Spectroscopic Analysis 16%
• Heterostructure 16%
• Electronic Devices 16%
• Electronic Applications 16%
• Application-oriented 16%
• Two-dimensional Transition Metal Dichalcogenides 16%
• Electric Light 16%
• Peak-to-valley Current Ratio 16%
• Electron Bombardment 16%
• Electric Field Intensity 16%
• Chemical Treatment 16%
• KOH Solution 16%
• Physical Therapy 16%
• Gate Electric Field 16%
• Electron Transport Characteristics 16%

Material Science

• Monolayers 100%
• Transistor 100%
• Field Effect Transistor 75%
• Vacancy Defect 50%
• Heterojunction 25%
• Electron Transfer 25%
• Transition Metal Dichalcogenide 25%