Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxy

Jenn-Fang Chen*, Nie Chuan Chen, Hung Sing Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A dominant deep level with an activation energy of 0.23-0.26 eV was observed by admittance spectroscopy in SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The Sb4/Ga flux ratio was found to affect the Hall mobility and the concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio of around 7 obtained for GaSb grown at 550°C, which should correspond to the lowest ratio at which a Sb-stabilized surface reconstruction can be maintained. This electron level is commonly detected in n-type (SnTe-, S- and Te-doped) GaSb, but not in undoped p-type GaSb, suggesting that the level is not a simple native defect, but may be connected with the impurity used for n-type doping of GaSb.

Original languageEnglish
Pages (from-to)L813-L815
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number7 PART A
StatePublished - 1 Jul 1996


  • Admittance spectroscopy
  • Deep levels
  • GaSb
  • SnTe dopants


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