Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

V. V. Ilchenko; Sheng-Di Lin; C. P. Lee; O. V. Tretyak

doi:10.1063/1.1336519

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

V. V. Ilchenko^*, Sheng-Di Lin, C. P. Lee, O. V. Tretyak

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

Original language	English
Pages (from-to)	1172-1174
Number of pages	3
Journal	Journal of Applied Physics
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.1336519
State	Published - 15 Jan 2001

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abstract = "Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.",

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AU - Lin, Sheng-Di

AU - Lee, C. P.

AU - Tretyak, O. V.

PY - 2001/1/15

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N2 - Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

AB - Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

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Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

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