Decreasing-size distributed ESD protection scheme for broad-band RF circuits

Ming-Dou Ker*, Bing Jye Kuo

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Scopus citations


    The capacitive load, from the large electrostatic discharge (ESD) protection device for high ESD robustness, has an adverse effect on the performance of broad-band RF circuits due to impedance mismatch and bandwidth degradation. The conventional distributed ESD protection scheme using equal four-stage ESD protection can achieve a better, impedance match, but degrade the ESD performance. A new distributed ESD protection structure is proposed to achieve both good ESD robustness and RF performance. The proposed ESD protection circuit is constructed by arranging ESD protection stages with decreasing device size, called as decreasing-size distributed electrostatic discharge (DS-DESD) protection scheme, which is beneficial to the ESD level. The new proposed DS-DESD protection scheme with a total capacitance of 200 fF from the ESD diodes has been successfully verified in a 0.25-μm CMOS process to sustain a human-body-model ESD level of greater than 8 kV.

    Original languageEnglish
    Pages (from-to)582-589
    Number of pages8
    JournalIEEE Transactions on Microwave Theory and Techniques
    Issue number2
    StatePublished - 1 Feb 2005


    • Coplanar waveguide (CPW)
    • Distributed electrostatic discharge (DESD) protection
    • Electrostatic discharge (ESD)
    • Resistive ladder
    • Shallow-trench isolation (STI) diode


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