TY - GEN
T1 - DC/RF Performance and Reliability of 100-nm Gate Length AlGaN/GaN MIS-HEMTs with Different Thickness of in-situ SiN
AU - Su, Chin Ya
AU - Tsai, Meng Che
AU - Wu, Tian Li
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - GaN HEMTs are promising for RF applications because of their wide bandgap and high electron mobility. To achieve a rapid operation speed, scaling of gate length is necessary for RF devices. Furthermore, metal-insulator-semiconductor (MIS)-HEMTs are often used to achieve a low gate leakage current. In this work, AlGaN/GaN MIS-HEMTs with 100-nm LG and 15/30-nm in-situ SiN as gate dielectric were fabricated and analyzed. Typical DC and RF characteristics, and reliability evaluations including gate-lag/drain-lag measurement, were conducted. The device with thinner in-situ SiN exhibits better RF performance (fT/ fMax= 101/73 GHz; PAE =38%) but with a larger current drop after gate-lag/drain-lag measurements, which can be due to a higher electric field caused by the thinner dielectric.
AB - GaN HEMTs are promising for RF applications because of their wide bandgap and high electron mobility. To achieve a rapid operation speed, scaling of gate length is necessary for RF devices. Furthermore, metal-insulator-semiconductor (MIS)-HEMTs are often used to achieve a low gate leakage current. In this work, AlGaN/GaN MIS-HEMTs with 100-nm LG and 15/30-nm in-situ SiN as gate dielectric were fabricated and analyzed. Typical DC and RF characteristics, and reliability evaluations including gate-lag/drain-lag measurement, were conducted. The device with thinner in-situ SiN exhibits better RF performance (fT/ fMax= 101/73 GHz; PAE =38%) but with a larger current drop after gate-lag/drain-lag measurements, which can be due to a higher electric field caused by the thinner dielectric.
UR - http://www.scopus.com/inward/record.url?scp=85163016021&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134287
DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134287
M3 - Conference contribution
AN - SCOPUS:85163016021
T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Y2 - 17 April 2023 through 20 April 2023
ER -