@inproceedings{1980e62c7c7c408f83f3d76a45c4ae88,
title = "DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with ML and BL MoS2",
abstract = "For the first time, we examine the performance of gate-all-around nanosheet field effect transistor (GAA NS FET) with both monolayer (ML) and bilayer (BL) molybdenum disulfide (MoS2). As compared to the control sample of silicon (Si), MoS2 devices exhibit reduced short-channel effects (SCE) owing to its larger band gap and larger effective mass. The GAA NS FET with BL MoS2 possesses moderate energy bandgap and large channel thickness which exhibits superior on state current and voltage gain.",
keywords = "BL and ML MoS, DC/AC/RF characteristics, electronic properties, GAA NS FETs",
author = "Chan, {Yueh Ju} and Kola, {Sekhar Reddy} and Yiming Li",
note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.; 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 ; Conference date: 27-09-2023 Through 29-09-2023",
year = "2023",
doi = "10.23919/SISPAD57422.2023.10319639",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "61--64",
booktitle = "2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023",
address = "美國",
}