Damage caused by rf oxygen plasma asher

Seiji Samukawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

Original languageEnglish
Pages (from-to)L1467-L1469
JournalJapanese journal of applied physics
Volume28
Issue number8 A
DOIs
StatePublished - 1 Aug 1989

Keywords

  • Barrel asher
  • Damage
  • Downstream asher
  • Mobile ion contamination
  • Stored charge

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