Damage caused by rf oxygen plasma asher

Seiji Samukawa

doi:10.1143/JJAP.28.L1467

Damage caused by rf oxygen plasma asher

Seiji Samukawa^*

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

Original language	English
Pages (from-to)	L1467-L1469
Journal	Japanese journal of applied physics
Volume	28
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.28.L1467
State	Published - 1 Aug 1989

Keywords

Barrel asher
Damage
Downstream asher
Mobile ion contamination
Stored charge

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10.1143/JJAP.28.L1467

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@article{444a3c1310b14bf0819335c7b6b4445a,

title = "Damage caused by rf oxygen plasma asher",

abstract = "A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.",

keywords = "Barrel asher, Damage, Downstream asher, Mobile ion contamination, Stored charge",

author = "Seiji Samukawa",

year = "1989",

month = aug,

day = "1",

doi = "10.1143/JJAP.28.L1467",

language = "English",

volume = "28",

pages = "L1467--L1469",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 A",

}

TY - JOUR

T1 - Damage caused by rf oxygen plasma asher

AU - Samukawa, Seiji

PY - 1989/8/1

Y1 - 1989/8/1

N2 - A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

AB - A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

KW - Barrel asher

KW - Damage

KW - Downstream asher

KW - Mobile ion contamination

KW - Stored charge

UR - http://www.scopus.com/inward/record.url?scp=0024718248&partnerID=8YFLogxK

U2 - 10.1143/JJAP.28.L1467

DO - 10.1143/JJAP.28.L1467

M3 - Article

AN - SCOPUS:0024718248

VL - 28

SP - L1467-L1469

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 8 A

ER -

Damage caused by rf oxygen plasma asher

Abstract

Keywords

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