CVD flow field modeling using the Quiet Direct Simulation (QDS) method

H. M. Cave, C. W. Lim, M. C. Jermy, Jong-Shinn Wu, M. R. Smith, S. P. Krumdieck

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the Quiet Direct Simulation (QDS) method is used to model the unsteady jet development in a Pulsed Pressure Chemical Vapour Deposition (PP-CVD) reactor. QDS is a novel method of gas flow simulation which is able to compute true-direction fluxes of mass, momentum and energy in a computationally efficient and accurate manner. The scheme is ideal for the simulation of novel CVD processes like PP-CVD which include highly unsteady flow structures and which has previously proved extremely difficult to simulate. Here, the axisymmetric QDS solver is outlined and the injection phase of a PP-CVD reactor is simulated.

Original languageAmerican English
Title of host publicationECS Transactions - EuroCVD 17/CVD 17
PublisherECS Transactions
Pages389-396
Number of pages8
Edition8 PART 1
ISBN (Print)9781566777452
DOIs
StatePublished - 2009
Event17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 4 Oct 20099 Oct 2009

Publication series

NameECS Transactions
Number8 PART 1
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period4/10/099/10/09

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