Current spreading of III-nitride light-emitting diodes using plasma treatment

Hsin Ying Lee, Ke Hao Pan, Chih Chien Lin, Yun Chorng Chang, Fu Jen Kao, Ching Ting Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.

Original languageEnglish
Pages (from-to)1280-1283
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - 2007


Dive into the research topics of 'Current spreading of III-nitride light-emitting diodes using plasma treatment'. Together they form a unique fingerprint.

Cite this