Abstract
In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
Original language | English |
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Article number | 6134636 |
Pages (from-to) | 608-610 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 24 |
Issue number | 7 |
DOIs | |
State | Published - 30 Mar 2012 |
Keywords
- Current spreading
- InGaN/GaN
- light-emitting diode (LED)
- nano