Current properties of GaN V-defect using conductive atomic force microscopy

Ling Lee; Ching Shun Ku; Wen Cheng Ke; Chih Wei Ho; Huai Ying Huang; Ming Chih Lee; Wen Hsiung Chen; Wu-Ching Chou; Wei-Kuo Chen

doi:10.1143/JJAP.45.L817

Current properties of GaN V-defect using conductive atomic force microscopy

Ling Lee^*, Ching Shun Ku, Wen Cheng Ke, Chih Wei Ho, Huai Ying Huang, Ming Chih Lee, Wen Hsiung Chen, Wu-Ching Chou, Wei-Kuo Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	29-32
DOIs	https://doi.org/10.1143/JJAP.45.L817
State	Published - 11 Aug 2006

Keywords

CAFM
Fowler-Nordheim tunneling
GaN
Schottky
V-defect

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10.1143/JJAP.45.L817

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title = "Current properties of GaN V-defect using conductive atomic force microscopy",

abstract = "Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.",

keywords = "CAFM, Fowler-Nordheim tunneling, GaN, Schottky, V-defect",

author = "Ling Lee and Ku, {Ching Shun} and Ke, {Wen Cheng} and Ho, {Chih Wei} and Huang, {Huai Ying} and Lee, {Ming Chih} and Chen, {Wen Hsiung} and Wu-Ching Chou and Wei-Kuo Chen",

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doi = "10.1143/JJAP.45.L817",

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T1 - Current properties of GaN V-defect using conductive atomic force microscopy

AU - Lee, Ling

AU - Ku, Ching Shun

AU - Ke, Wen Cheng

AU - Ho, Chih Wei

AU - Huang, Huai Ying

AU - Lee, Ming Chih

AU - Chen, Wen Hsiung

AU - Chou, Wu-Ching

AU - Chen, Wei-Kuo

PY - 2006/8/11

Y1 - 2006/8/11

N2 - Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.

AB - Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.

KW - CAFM

KW - Fowler-Nordheim tunneling

KW - GaN

KW - Schottky

KW - V-defect

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U2 - 10.1143/JJAP.45.L817

DO - 10.1143/JJAP.45.L817

M3 - Article

AN - SCOPUS:34548558568

SN - 0021-4922

VL - 45

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 29-32

ER -

Current properties of GaN V-defect using conductive atomic force microscopy

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Keywords

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