Cu-penetration induced breakdown mechanism for a-SiCN

C. W. Chen; Po-Tsun Liu; T. C. Chang; J. H. Yang; T. M. Tsai; H. H. Wu; Tseung-Yuen Tseng

doi:10.1016/j.tsf.2004.08.161

Cu-penetration induced breakdown mechanism for a-SiCN

C. W. Chen, Po-Tsun Liu^*, T. C. Chang, J. H. Yang, T. M. Tsai, H. H. Wu, Tseung-Yuen Tseng

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have investigated the leakage mechanism of amorphous SiCN (a-SiCN) films after bias-temperature-stress (BTS) with Cu electrode. The leakage current became very large and breakdown due to the Cu ions penetration after strict BTS condition. The distribution profile of Cu penetration was depicted by SIMS spectrum. It is apparent that Cu ions penetrated into the a-SiCN film and even reached to the interface between a-SiCN/Si due to BTS. The Cu ions existing in a-SiCN would be taken as trap states and could enhance the carriers to transport. The main characteristics of post-breakdown a-SiCN followed the space-charge-limited current (SCLC) mechanism at 298 K. With decreasing the temperature to 100 K, the Fowler-Nordheim tunneling dominated the conduction in medium fields. However, electrons obeyed the SCLC again in high fields (>3.3 MV/cm) at 100 K. We purpose a physical model to interpret the leakage mechanism of breakdown a-SiCN films due to Cu ions.

Original language	English
Pages (from-to)	388-392
Number of pages	5
Journal	Thin Solid Films
Volume	469-470
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.08.161
State	Published - 22 Dec 2004

Keywords

Dielectrics
Electrical properties and measurements

Access to Document

10.1016/j.tsf.2004.08.161

Cite this

@article{59b585241af14e8d9b970f43304a42c9,

title = "Cu-penetration induced breakdown mechanism for a-SiCN",

abstract = "We have investigated the leakage mechanism of amorphous SiCN (a-SiCN) films after bias-temperature-stress (BTS) with Cu electrode. The leakage current became very large and breakdown due to the Cu ions penetration after strict BTS condition. The distribution profile of Cu penetration was depicted by SIMS spectrum. It is apparent that Cu ions penetrated into the a-SiCN film and even reached to the interface between a-SiCN/Si due to BTS. The Cu ions existing in a-SiCN would be taken as trap states and could enhance the carriers to transport. The main characteristics of post-breakdown a-SiCN followed the space-charge-limited current (SCLC) mechanism at 298 K. With decreasing the temperature to 100 K, the Fowler-Nordheim tunneling dominated the conduction in medium fields. However, electrons obeyed the SCLC again in high fields (>3.3 MV/cm) at 100 K. We purpose a physical model to interpret the leakage mechanism of breakdown a-SiCN films due to Cu ions.",

keywords = "Dielectrics, Electrical properties and measurements",

author = "Chen, {C. W.} and Po-Tsun Liu and Chang, {T. C.} and Yang, {J. H.} and Tsai, {T. M.} and Wu, {H. H.} and Tseung-Yuen Tseng",

year = "2004",

month = dec,

day = "22",

doi = "10.1016/j.tsf.2004.08.161",

language = "English",

volume = "469-470",

pages = "388--392",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Cu-penetration induced breakdown mechanism for a-SiCN

AU - Chen, C. W.

AU - Liu, Po-Tsun

AU - Chang, T. C.

AU - Yang, J. H.

AU - Tsai, T. M.

AU - Wu, H. H.

AU - Tseng, Tseung-Yuen

PY - 2004/12/22

Y1 - 2004/12/22

N2 - We have investigated the leakage mechanism of amorphous SiCN (a-SiCN) films after bias-temperature-stress (BTS) with Cu electrode. The leakage current became very large and breakdown due to the Cu ions penetration after strict BTS condition. The distribution profile of Cu penetration was depicted by SIMS spectrum. It is apparent that Cu ions penetrated into the a-SiCN film and even reached to the interface between a-SiCN/Si due to BTS. The Cu ions existing in a-SiCN would be taken as trap states and could enhance the carriers to transport. The main characteristics of post-breakdown a-SiCN followed the space-charge-limited current (SCLC) mechanism at 298 K. With decreasing the temperature to 100 K, the Fowler-Nordheim tunneling dominated the conduction in medium fields. However, electrons obeyed the SCLC again in high fields (>3.3 MV/cm) at 100 K. We purpose a physical model to interpret the leakage mechanism of breakdown a-SiCN films due to Cu ions.

AB - We have investigated the leakage mechanism of amorphous SiCN (a-SiCN) films after bias-temperature-stress (BTS) with Cu electrode. The leakage current became very large and breakdown due to the Cu ions penetration after strict BTS condition. The distribution profile of Cu penetration was depicted by SIMS spectrum. It is apparent that Cu ions penetrated into the a-SiCN film and even reached to the interface between a-SiCN/Si due to BTS. The Cu ions existing in a-SiCN would be taken as trap states and could enhance the carriers to transport. The main characteristics of post-breakdown a-SiCN followed the space-charge-limited current (SCLC) mechanism at 298 K. With decreasing the temperature to 100 K, the Fowler-Nordheim tunneling dominated the conduction in medium fields. However, electrons obeyed the SCLC again in high fields (>3.3 MV/cm) at 100 K. We purpose a physical model to interpret the leakage mechanism of breakdown a-SiCN films due to Cu ions.

KW - Dielectrics

KW - Electrical properties and measurements

UR - http://www.scopus.com/inward/record.url?scp=10044235116&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.08.161

DO - 10.1016/j.tsf.2004.08.161

M3 - Article

AN - SCOPUS:10044235116

SN - 0040-6090

VL - 469-470

SP - 388

EP - 392

JO - Thin Solid Films

JF - Thin Solid Films

IS - SPEC. ISS.

ER -

Cu-penetration induced breakdown mechanism for a-SiCN

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this