TY - JOUR
T1 - CsPbBr3@Glass@SiO2 Composite Materials with Ultrahigh Water Resistance and Thermal Reversibility of Photoluminescence
AU - Liu, Ching
AU - Huang, Wen Tse
AU - Li, Juqing
AU - Lee, Yu Chun
AU - Tsai, Tzong Liang
AU - Shen, Fang Chun
AU - Wu, Wen Wei
AU - Liu, Ru Shi
AU - Zhang, Xuejie
N1 - Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/12/4
Y1 - 2023/12/4
N2 - Perovskite quantum dots usually possess excellent optical properties, such as high color purity, high photoluminescence quantum yield, and tunable emission wavelength. However, their relatively low stability against heat, water, oxygen, and light hinders their practical applications in the field of optoelectronic devices. Herein, melt-quenching and heat treatment crystallization methods are used to fabricate the CsPbBr3@glass. Atomic layer deposition and the sol–gel method are applied to encapsulate the CsPbBr3@glass with a dense SiO2 layer and hydrophobic SiO2 layer, respectively, to further improve the water resistance, thermal reversibility of photoluminescence, and photostability. The CsPbBr3@glass@ASG can be synthesized with the triple layer encapsulation of the glass matrix, dense SiO2 layer, and hydrophobic SiO2 layer. During the water resistance test for seven weeks, CsPbBr3@glass@ASG can preserve ≈100% of initial PL intensity. Similarly, it can preserve ≈100% of PL intensity after five continuous heating–cooling cycles between 30 and 100 °C. In addition, the internal and external quantum efficiencies of CsPbBr3@glass@ASG can still be maintained at 42.0% and 33.7%, respectively. Results indicate that CsPbBr3@glass@ASG can provide a balance between optical properties and extrinsic stability successfully, thereby becoming a potential candidate material for practical applications related to optoelectronic devices in the future.
AB - Perovskite quantum dots usually possess excellent optical properties, such as high color purity, high photoluminescence quantum yield, and tunable emission wavelength. However, their relatively low stability against heat, water, oxygen, and light hinders their practical applications in the field of optoelectronic devices. Herein, melt-quenching and heat treatment crystallization methods are used to fabricate the CsPbBr3@glass. Atomic layer deposition and the sol–gel method are applied to encapsulate the CsPbBr3@glass with a dense SiO2 layer and hydrophobic SiO2 layer, respectively, to further improve the water resistance, thermal reversibility of photoluminescence, and photostability. The CsPbBr3@glass@ASG can be synthesized with the triple layer encapsulation of the glass matrix, dense SiO2 layer, and hydrophobic SiO2 layer. During the water resistance test for seven weeks, CsPbBr3@glass@ASG can preserve ≈100% of initial PL intensity. Similarly, it can preserve ≈100% of PL intensity after five continuous heating–cooling cycles between 30 and 100 °C. In addition, the internal and external quantum efficiencies of CsPbBr3@glass@ASG can still be maintained at 42.0% and 33.7%, respectively. Results indicate that CsPbBr3@glass@ASG can provide a balance between optical properties and extrinsic stability successfully, thereby becoming a potential candidate material for practical applications related to optoelectronic devices in the future.
KW - CsPbBr@glass@SiO
KW - perovskite quantum dot glass
KW - thermal reversibility
KW - triple encapsulated protection
KW - water resistance
UR - http://www.scopus.com/inward/record.url?scp=85164494226&partnerID=8YFLogxK
U2 - 10.1002/adom.202300963
DO - 10.1002/adom.202300963
M3 - Article
AN - SCOPUS:85164494226
SN - 2195-1071
VL - 11
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 23
M1 - 2300963
ER -