Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors

H. Nakayama*, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages339-345
Number of pages7
Edition6
DOIs
StatePublished - 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period5/10/097/10/09

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