Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.
|Title of host publication||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7|
|Number of pages||7|
|State||Published - 2009|
|Event||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
Duration: 5 Oct 2009 → 7 Oct 2009
|Conference||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|Period||5/10/09 → 7/10/09|