Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

Chien Chih Chen; Chun Yan Yap; Wen Yang Hsu; Cheng Ta Kuo; Tzong Liang Tsai; Jui Yi Chu; Yew-Chuhg Wu

doi:10.1149/2.0021409ssl

Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

Chien Chih Chen, Chun Yan Yap, Wen Yang Hsu, Cheng Ta Kuo, Tzong Liang Tsai, Jui Yi Chu, Yew-Chuhg Wu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

Original language	English
Journal	ECS Solid State Letters
Volume	3
Issue number	9
DOIs	https://doi.org/10.1149/2.0021409ssl
State	Published - 1 Jan 2014

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title = "Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate",

abstract = "The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.",

author = "Chen, {Chien Chih} and Yap, {Chun Yan} and Hsu, {Wen Yang} and Kuo, {Cheng Ta} and Tsai, {Tzong Liang} and Chu, {Jui Yi} and Yew-Chuhg Wu",

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doi = "10.1149/2.0021409ssl",

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T1 - Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

AU - Chen, Chien Chih

AU - Yap, Chun Yan

AU - Hsu, Wen Yang

AU - Kuo, Cheng Ta

AU - Tsai, Tzong Liang

AU - Chu, Jui Yi

AU - Wu, Yew-Chuhg

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

AB - The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

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VL - 3

JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 9

ER -

Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

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