Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate

Yew-Chuhg Wu; A. Panimaya Selvi Isabel; Jian Hsuan Zheng; Bo Wen Lin; Jhen Hong Li; Chia Chen Lin

doi:10.3390/ma8041993

Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate

Yew-Chuhg Wu^*, A. Panimaya Selvi Isabel, Jian Hsuan Zheng, Bo Wen Lin, Jhen Hong Li, Chia Chen Lin

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

Original language	English
Pages (from-to)	1993-1999
Number of pages	7
Journal	Materials
Volume	8
Issue number	4
DOIs	https://doi.org/10.3390/ma8041993
State	Published - 1 Jan 2015

Keywords

Concave patterned sapphire substrate
Crystal quality
Gan-based led
Light output power

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title = "Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate",

abstract = "The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.",

keywords = "Concave patterned sapphire substrate, Crystal quality, Gan-based led, Light output power",

author = "Yew-Chuhg Wu and Isabel, {A. Panimaya Selvi} and Zheng, {Jian Hsuan} and Lin, {Bo Wen} and Li, {Jhen Hong} and Lin, {Chia Chen}",

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AU - Wu, Yew-Chuhg

AU - Isabel, A. Panimaya Selvi

AU - Zheng, Jian Hsuan

AU - Lin, Bo Wen

AU - Li, Jhen Hong

AU - Lin, Chia Chen

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

AB - The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

KW - Concave patterned sapphire substrate

KW - Crystal quality

KW - Gan-based led

KW - Light output power

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SN - 1996-1944

VL - 8

SP - 1993

EP - 1999

JO - Materials

JF - Materials

IS - 4

ER -

Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate

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Keywords

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