Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network

Po Tsang Huang; Yu Wei Liu; Kuan Fu Lai; Yun Ping Lan; Tzung Han Tsai; Bo Jheng Shih; Ping Yi Hsieh; Chih Chao Yang; Chang Hong Shen; Jia Min Shieh; Da Chiang Chang; Kuan Neng Chen; Wen Kuan Yeh; Chenming Hu

doi:10.1109/IEDM13553.2020.9372129

Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network

Po Tsang Huang^*, Yu Wei Liu, Kuan Fu Lai, Yun Ping Lan, Tzung Han Tsai, Bo Jheng Shih, Ping Yi Hsieh, Chih Chao Yang, Chang Hong Shen, Jia Min Shieh, Da Chiang Chang, Kuan Neng Chen, Wen Kuan Yeh, Chenming Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed single-crystal Si islands exhibit excellent electrical performance and low intra-island variability. To mitigate the effects of island-to-island device variation due to random island crystal orientations, crystal-orientation-tolerant voltage regulator is further proposed by allocating power gating (PG) cells among multiple Si islands, and 42% power noise suppression can be achieved.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	40.6.1-40.6.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9372129
State	Published - 12 Dec 2020
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 12 Dec 2020 → 18 Dec 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 18/12/20

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10.1109/IEDM13553.2020.9372129

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Huang, P. T., Liu, Y. W., Lai, K. F., Lan, Y. P., Tsai, T. H., Shih, B. J., Hsieh, P. Y., Yang, C. C., Shen, C. H., Shieh, J. M., Chang, D. C., Chen, K. N., Yeh, W. K., & Hu, C. (2020). Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 40.6.1-40.6.4). Article 9372129 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9372129

Huang, Po Tsang ; Liu, Yu Wei ; Lai, Kuan Fu et al. / Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 40.6.1-40.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{8cdd46b29b094f9bb246a26ebc5eed93,

title = "Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network",

abstract = "A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed single-crystal Si islands exhibit excellent electrical performance and low intra-island variability. To mitigate the effects of island-to-island device variation due to random island crystal orientations, crystal-orientation-tolerant voltage regulator is further proposed by allocating power gating (PG) cells among multiple Si islands, and 42% power noise suppression can be achieved.",

author = "Huang, {Po Tsang} and Liu, {Yu Wei} and Lai, {Kuan Fu} and Lan, {Yun Ping} and Tsai, {Tzung Han} and Shih, {Bo Jheng} and Hsieh, {Ping Yi} and Yang, {Chih Chao} and Shen, {Chang Hong} and Shieh, {Jia Min} and Chang, {Da Chiang} and Chen, {Kuan Neng} and Yeh, {Wen Kuan} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9372129",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "40.6.1--40.6.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "美國",

}

Huang, PT, Liu, YW, Lai, KF, Lan, YP, Tsai, TH, Shih, BJ, Hsieh, PY, Yang, CC, Shen, CH, Shieh, JM, Chang, DC, Chen, KN, Yeh, WK & Hu, C 2020, Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9372129, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 40.6.1-40.6.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9372129

Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network. / Huang, Po Tsang; Liu, Yu Wei; Lai, Kuan Fu et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 40.6.1-40.6.4 9372129 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network

AU - Huang, Po Tsang

AU - Liu, Yu Wei

AU - Lai, Kuan Fu

AU - Lan, Yun Ping

AU - Tsai, Tzung Han

AU - Shih, Bo Jheng

AU - Hsieh, Ping Yi

AU - Yang, Chih Chao

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Chang, Da Chiang

AU - Chen, Kuan Neng

AU - Yeh, Wen Kuan

AU - Hu, Chenming

PY - 2020/12/12

Y1 - 2020/12/12

N2 - A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed single-crystal Si islands exhibit excellent electrical performance and low intra-island variability. To mitigate the effects of island-to-island device variation due to random island crystal orientations, crystal-orientation-tolerant voltage regulator is further proposed by allocating power gating (PG) cells among multiple Si islands, and 42% power noise suppression can be achieved.

AB - A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed single-crystal Si islands exhibit excellent electrical performance and low intra-island variability. To mitigate the effects of island-to-island device variation due to random island crystal orientations, crystal-orientation-tolerant voltage regulator is further proposed by allocating power gating (PG) cells among multiple Si islands, and 42% power noise suppression can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=85102946467&partnerID=8YFLogxK

U2 - 10.1109/IEDM13553.2020.9372129

DO - 10.1109/IEDM13553.2020.9372129

M3 - Conference contribution

AN - SCOPUS:85102946467

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 40.6.1-40.6.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Huang PT, Liu YW, Lai KF, Lan YP, Tsai TH, Shih BJ et al. Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 40.6.1-40.6.4. 9372129. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9372129

Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network

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