Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics

Yao Jen Lee; Pei Tsang Ho; Wen Luh Yang; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1143/JJAP.45.1520

Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics

Yao Jen Lee^*, Pei Tsang Ho, Wen Luh Yang, Tien-Sheng Chao, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.

Original language	English
Pages (from-to)	1520-1524
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	3 A
DOIs	https://doi.org/10.1143/JJAP.45.1520
State	Published - 8 Mar 2006

Keywords

Geometry effects
Nitrogen
Orientation
Si(100)
Si(111)
Ultra thin

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10.1143/JJAP.45.1520

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Lee, Y. J., Ho, P. T., Yang, W. L., Chao, T-S., & Huang, T. Y. (2006). Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(3 A), 1520-1524. https://doi.org/10.1143/JJAP.45.1520

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title = "Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics",

abstract = "In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.",

keywords = "Geometry effects, Nitrogen, Orientation, Si(100), Si(111), Ultra thin",

author = "Lee, {Yao Jen} and Ho, {Pei Tsang} and Yang, {Wen Luh} and Tien-Sheng Chao and Huang, {Tiao Yuan}",

year = "2006",

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day = "8",

doi = "10.1143/JJAP.45.1520",

language = "English",

volume = "45",

pages = "1520--1524",

journal = "Japanese Journal of Applied Physics",

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Lee, YJ, Ho, PT, Yang, WL, Chao, T-S & Huang, TY 2006, 'Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 3 A, pp. 1520-1524. https://doi.org/10.1143/JJAP.45.1520

Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics. / Lee, Yao Jen; Ho, Pei Tsang; Yang, Wen Luh et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 3 A, 08.03.2006, p. 1520-1524.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics

AU - Lee, Yao Jen

AU - Ho, Pei Tsang

AU - Yang, Wen Luh

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2006/3/8

Y1 - 2006/3/8

N2 - In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.

AB - In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.

KW - Geometry effects

KW - Nitrogen

KW - Orientation

KW - Si(100)

KW - Si(111)

KW - Ultra thin

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U2 - 10.1143/JJAP.45.1520

DO - 10.1143/JJAP.45.1520

M3 - Article

AN - SCOPUS:33644900790

VL - 45

SP - 1520

EP - 1524

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 3 A

ER -

Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics

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