Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications

K. Y. Hsiang, J. Y. Lee, Z. F. Lou, F. S. Chang, Z. X. Li, C. W. Liu, T. H. Hou, P. Su, M. H. Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf_1-xZr_xO_2 capacitors is investigated for ∼ 1010 cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with 80% normalized switching 2P_r,sw for t_p= 1μs compared to 60% for the FE capacitor at 80 K.

Original languageEnglish
Title of host publication2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665456722
DOIs
StatePublished - 2023
Event61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
Duration: 26 Mar 202330 Mar 2023

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2023-March
ISSN (Print)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/TerritoryUnited States
CityMonterey
Period26/03/2330/03/23

Keywords

  • Antiferroelectric
  • Cryogenic
  • Endurance
  • Ferroelectric

Fingerprint

Dive into the research topics of 'Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications'. Together they form a unique fingerprint.

Cite this