Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Tien-Sheng Chao; T. F. Lei

doi:10.1149/1.2048576

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Tien-Sheng Chao, T. F. Lei

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

Original language	English
Pages (from-to)	L34-L35
Journal	Journal of the Electrochemical Society
Volume	142
Issue number	3
DOIs	https://doi.org/10.1149/1.2048576
State	Published - Mar 1995

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title = "Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20",

abstract = "Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.",

author = "Tien-Sheng Chao and Lei, {T. F.}",

year = "1995",

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T1 - Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

AU - Chao, Tien-Sheng

AU - Lei, T. F.

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Y1 - 1995/3

N2 - Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

AB - Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

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U2 - 10.1149/1.2048576

DO - 10.1149/1.2048576

M3 - Article

AN - SCOPUS:0029273998

SN - 0013-4651

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SP - L34-L35

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Abstract

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