Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.
|Journal||Journal of the Electrochemical Society|
|State||Published - 1 Jan 1995|