Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

Chun Tse Chou, Boris Hudec*, Chung Wei Hsu, Wei Li Lai, Chih Cheng Chang, Tuo-Hung Hou

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    23 Scopus citations


    In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 104 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.

    Original languageEnglish
    Pages (from-to)2220-2223
    Number of pages4
    JournalMicroelectronics Reliability
    Issue number11
    StatePublished - Nov 2015


    • Bilayer
    • Crossbar array
    • Forming-free
    • RRAM
    • Self-rectifying
    • TiO2


    Dive into the research topics of 'Crossbar array of selector-less TaOx/TiO2 bilayer RRAM'. Together they form a unique fingerprint.

    Cite this