Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

Chun Tse Chou; Boris Hudec; Chung Wei Hsu; Wei Li Lai; Chih Cheng Chang; Tuo-Hung Hou

doi:10.1016/j.microrel.2015.04.002

Crossbar array of selector-less TaO_x/TiO₂ bilayer RRAM

Chun Tse Chou, Boris Hudec^*, Chung Wei Hsu, Wei Li Lai, Chih Cheng Chang, Tuo-Hung Hou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

In this work, we have implemented self-rectifying TaO_x/TiO₂ RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 10³ for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 10⁴ s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.

Original language	English
Pages (from-to)	2220-2223
Number of pages	4
Journal	Microelectronics Reliability
Volume	55
Issue number	11
DOIs	https://doi.org/10.1016/j.microrel.2015.04.002
State	Published - Nov 2015

Keywords

Bilayer
Crossbar array
Forming-free
RRAM
Self-rectifying
TiO2

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10.1016/j.microrel.2015.04.002

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title = "Crossbar array of selector-less TaOx/TiO2 bilayer RRAM",

abstract = "In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 104 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.",

keywords = "Bilayer, Crossbar array, Forming-free, RRAM, Self-rectifying, TiO2",

author = "Chou, {Chun Tse} and Boris Hudec and Hsu, {Chung Wei} and Lai, {Wei Li} and Chang, {Chih Cheng} and Tuo-Hung Hou",

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T1 - Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

AU - Chou, Chun Tse

AU - Hudec, Boris

AU - Hsu, Chung Wei

AU - Lai, Wei Li

AU - Chang, Chih Cheng

AU - Hou, Tuo-Hung

PY - 2015/11

Y1 - 2015/11

N2 - In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 104 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.

AB - In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 104 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.

KW - Bilayer

KW - Crossbar array

KW - Forming-free

KW - RRAM

KW - Self-rectifying

KW - TiO2

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M3 - Article

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VL - 55

SP - 2220

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 11

ER -

Crossbar array of selector-less TaO_x/TiO₂ bilayer RRAM

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Keywords

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