Cross-sectional transmission electron microscopy of silicon-silicide interfaces

F. Föll; P. S. Ho; King-Ning Tu

doi:10.1063/1.328440

Cross-sectional transmission electron microscopy of silicon-silicide interfaces

F. Föll^*, P. S. Ho, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

111 Scopus citations

Abstract

The epitaxial interfaces of Si/Pd₂Si, Si/NiSi₂, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross-sectional specimens. Direct lattice imaging was used to image the Si/Pd₂Si and the Si/NiSi₂ interfaces. The Si/Pd₂Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi₂ interface. A twinning relationship between NiSi₂ and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd- and Ni-silicide cases. No evidence for an amorphous interfacial layer has been obtained.

Original language	English
Pages (from-to)	250-255
Number of pages	6
Journal	Journal of Applied Physics
Volume	52
Issue number	1
DOIs	https://doi.org/10.1063/1.328440
State	Published - 1 Dec 1981

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title = "Cross-sectional transmission electron microscopy of silicon-silicide interfaces",

abstract = "The epitaxial interfaces of Si/Pd2Si, Si/NiSi2, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross-sectional specimens. Direct lattice imaging was used to image the Si/Pd2Si and the Si/NiSi2 interfaces. The Si/Pd2Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi2 interface. A twinning relationship between NiSi2 and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd- and Ni-silicide cases. No evidence for an amorphous interfacial layer has been obtained.",

author = "F. F{\"o}ll and Ho, {P. S.} and King-Ning Tu",

year = "1981",

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T1 - Cross-sectional transmission electron microscopy of silicon-silicide interfaces

AU - Föll, F.

AU - Ho, P. S.

AU - Tu, King-Ning

PY - 1981/12/1

Y1 - 1981/12/1

N2 - The epitaxial interfaces of Si/Pd2Si, Si/NiSi2, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross-sectional specimens. Direct lattice imaging was used to image the Si/Pd2Si and the Si/NiSi2 interfaces. The Si/Pd2Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi2 interface. A twinning relationship between NiSi2 and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd- and Ni-silicide cases. No evidence for an amorphous interfacial layer has been obtained.

AB - The epitaxial interfaces of Si/Pd2Si, Si/NiSi2, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross-sectional specimens. Direct lattice imaging was used to image the Si/Pd2Si and the Si/NiSi2 interfaces. The Si/Pd2Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi2 interface. A twinning relationship between NiSi2 and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd- and Ni-silicide cases. No evidence for an amorphous interfacial layer has been obtained.

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EP - 255

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JF - Journal of Applied Physics

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IS - 1

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Cross-sectional transmission electron microscopy of silicon-silicide interfaces

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