Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

C. Y. Hsueh; T. L. Huang; K. P. Peng; M. H. Kuo; Horng-Chih Lin; Pei-Wen Li

doi:10.23919/SNW.2017.8242320

Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

C. Y. Hsueh, T. L. Huang, K. P. Peng, M. H. Kuo, Horng-Chih Lin, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si₃N₄ and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	107-108
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242320
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

Access to Document

10.23919/SNW.2017.8242320

Cite this

Hsueh, C. Y., Huang, T. L., Peng, K. P., Kuo, M. H., Lin, H.-C., & Li, P.-W. (2017). Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 107-108). Article 8242320 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242320

Hsueh, C. Y. ; Huang, T. L. ; Peng, K. P. et al. / Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 107-108 (2017 Silicon Nanoelectronics Workshop, SNW 2017).

@inproceedings{66e28a9348cf47eba9ecc61d570b2301,

title = "Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices",

abstract = "We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.",

author = "Hsueh, {C. Y.} and Huang, {T. L.} and Peng, {K. P.} and Kuo, {M. H.} and Horng-Chih Lin and Pei-Wen Li",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242320",

language = "English",

series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "107--108",

booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

address = "美國",

}

Hsueh, CY, Huang, TL, Peng, KP, Kuo, MH, Lin, H-C & Li, P-W 2017, Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242320, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 107-108, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242320

Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. / Hsueh, C. Y.; Huang, T. L.; Peng, K. P. et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 107-108 8242320 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsueh, C. Y.

AU - Huang, T. L.

AU - Peng, K. P.

AU - Kuo, M. H.

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

PY - 2017/12/29

Y1 - 2017/12/29

N2 - We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.

AB - We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.

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DO - 10.23919/SNW.2017.8242320

M3 - Conference contribution

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T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

SP - 107

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BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

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T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017

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Hsueh CY, Huang TL, Peng KP, Kuo MH, Lin HC , Li PW. Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. In 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 107-108. 8242320. (2017 Silicon Nanoelectronics Workshop, SNW 2017). doi: 10.23919/SNW.2017.8242320

Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

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