CoTiO3 high-κ dielectrics on HSG for DRAM applications

Tien-Sheng Chao; Wei Ming Ku; Hong Chin Lin; Dolf Landheer; Yu Yang Wang; Yukihiro Mori

doi:10.1109/TED.2004.839880

CoTiO₃ high-κ dielectrics on HSG for DRAM applications

Tien-Sheng Chao^*, Wei Ming Ku, Hong Chin Lin, Dolf Landheer, Yu Yang Wang, Yukihiro Mori

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

In this paper, a new high-κ dielectric CoTiO₃ has been investigated for the first time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors. Three types of HSG were prepared. We found that capacitors with maximum grain size and the highest density exhibit twice the capacitance of the others. The dielectric constant for CoTiO₃ was estimated to be larger than 50. Leakage current measurements performed at temperatures as high as 100 °C show that this dielectric is stable. The polarity dependence is found to be due to the different barrier heights with the nitride barrier. A leakage mechanism is proposed for this polarity dependence.

Original language	English
Pages (from-to)	2200-2204
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	12
DOIs	https://doi.org/10.1109/TED.2004.839880
State	Published - 1 Dec 2004

Keywords

Dynamic random access memories (DRAM)
High-κ
Nitride

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10.1109/TED.2004.839880

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abstract = "In this paper, a new high-κ dielectric CoTiO3 has been investigated for the first time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors. Three types of HSG were prepared. We found that capacitors with maximum grain size and the highest density exhibit twice the capacitance of the others. The dielectric constant for CoTiO3 was estimated to be larger than 50. Leakage current measurements performed at temperatures as high as 100 °C show that this dielectric is stable. The polarity dependence is found to be due to the different barrier heights with the nitride barrier. A leakage mechanism is proposed for this polarity dependence.",

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AU - Lin, Hong Chin

AU - Landheer, Dolf

AU - Wang, Yu Yang

AU - Mori, Yukihiro

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AB - In this paper, a new high-κ dielectric CoTiO3 has been investigated for the first time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors. Three types of HSG were prepared. We found that capacitors with maximum grain size and the highest density exhibit twice the capacitance of the others. The dielectric constant for CoTiO3 was estimated to be larger than 50. Leakage current measurements performed at temperatures as high as 100 °C show that this dielectric is stable. The polarity dependence is found to be due to the different barrier heights with the nitride barrier. A leakage mechanism is proposed for this polarity dependence.

KW - Dynamic random access memories (DRAM)

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CoTiO₃ high-κ dielectrics on HSG for DRAM applications

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Keywords

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