Corrigendum to “Performance enhancement of MOCVD grown Zn-doped β-Ga2O3 deep-ultraviolet photodetectors on silicon substrates via TiN buffer layers” [J. Appl. Surf. Sci. 681 (2025) 161509] (Applied Surface Science (2025) 681, (S0169433224022244), (10.1016/j.apsusc.2024.161509))

Anoop Kumar Singh, Jun Hong Shen, Shiming Huang, Chao Chun Yen, Hsin Yu Chou, Wei Hsiang Chiang, Bharath Kumar Yadlapalli, Chiung Yi Huang, Po Liang Liu, Ray Hua Horng, Dong Sing Wuu*

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Abstract

The authors regret the error in listing one of the author's name (Po-Liang Liu) and his affiliation. The correct information of Po-Liang Liu is updated as above. The name in the credit author statement should also be read as Po-Liang Liu. The author would like to apologise for any inconvenience caused.

Original languageEnglish
Article number162077
JournalApplied Surface Science
Volume685
DOIs
StatePublished - 15 Mar 2025

Fingerprint

Dive into the research topics of 'Corrigendum to “Performance enhancement of MOCVD grown Zn-doped β-Ga2O3 deep-ultraviolet photodetectors on silicon substrates via TiN buffer layers” [J. Appl. Surf. Sci. 681 (2025) 161509] (Applied Surface Science (2025) 681, (S0169433224022244), (10.1016/j.apsusc.2024.161509))'. Together they form a unique fingerprint.

Cite this