Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films

Debajyoti Das; Madhusudan Jana; Ashok K. Barua; Surajit Chattopadhyay; Li Chyong Chen; Kuei Hsien Chen

doi:10.1143/jjap.41.l229

Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films

Debajyoti Das^*, Madhusudan Jana, Ashok K. Barua, Surajit Chattopadhyay, Li Chyong Chen, Kuei Hsien Chen

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Thermal diffusivity (α) has been correlated with the electrical and structural properties of hydrogenated microcrystalline silicon (μc-Si:H) films. In the heterogeneous microcrystalline network, α and electrical conductivity (σ_D) maintain a one-to-one correspondence, and both these parameters are directly related to the crystalline volume fraction (F_c) of the network. For the amorphous silicon network, α is ∼ 0.2 cm²·s¹ and has a very low σ_D of ∼ 10^-8S·cm^-1. When the crystalline volume fraction (F_c) exceeds a certain percolation threshold, both α and σ_D increase abruptly. Undoped μc-Si:H films having F_c ∼ 94% exhibit a high magnitude of α ∼ 0.80 cm²·s^-1 and a very high σ_D of ∼ 10^-3 S·cm^-1.

Original language	English
Pages (from-to)	L229-L232
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.41.l229
State	Published - 1 Mar 2002

Keywords

Crystalline volume fraction
Electrical conductivity
Microcrystalline silicon thin film
Thermal diffusivity

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title = "Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films",

abstract = "Thermal diffusivity (α) has been correlated with the electrical and structural properties of hydrogenated microcrystalline silicon (μc-Si:H) films. In the heterogeneous microcrystalline network, α and electrical conductivity (σD) maintain a one-to-one correspondence, and both these parameters are directly related to the crystalline volume fraction (Fc) of the network. For the amorphous silicon network, α is ∼ 0.2 cm2·s1 and has a very low σD of ∼ 10-8S·cm-1. When the crystalline volume fraction (Fc) exceeds a certain percolation threshold, both α and σD increase abruptly. Undoped μc-Si:H films having Fc ∼ 94% exhibit a high magnitude of α ∼ 0.80 cm2·s-1 and a very high σD of ∼ 10-3 S·cm-1.",

keywords = "Crystalline volume fraction, Electrical conductivity, Microcrystalline silicon thin film, Thermal diffusivity",

author = "Debajyoti Das and Madhusudan Jana and Barua, {Ashok K.} and Surajit Chattopadhyay and Chen, {Li Chyong} and Chen, {Kuei Hsien}",

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T1 - Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films

AU - Das, Debajyoti

AU - Jana, Madhusudan

AU - Barua, Ashok K.

AU - Chattopadhyay, Surajit

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

PY - 2002/3/1

Y1 - 2002/3/1

N2 - Thermal diffusivity (α) has been correlated with the electrical and structural properties of hydrogenated microcrystalline silicon (μc-Si:H) films. In the heterogeneous microcrystalline network, α and electrical conductivity (σD) maintain a one-to-one correspondence, and both these parameters are directly related to the crystalline volume fraction (Fc) of the network. For the amorphous silicon network, α is ∼ 0.2 cm2·s1 and has a very low σD of ∼ 10-8S·cm-1. When the crystalline volume fraction (Fc) exceeds a certain percolation threshold, both α and σD increase abruptly. Undoped μc-Si:H films having Fc ∼ 94% exhibit a high magnitude of α ∼ 0.80 cm2·s-1 and a very high σD of ∼ 10-3 S·cm-1.

AB - Thermal diffusivity (α) has been correlated with the electrical and structural properties of hydrogenated microcrystalline silicon (μc-Si:H) films. In the heterogeneous microcrystalline network, α and electrical conductivity (σD) maintain a one-to-one correspondence, and both these parameters are directly related to the crystalline volume fraction (Fc) of the network. For the amorphous silicon network, α is ∼ 0.2 cm2·s1 and has a very low σD of ∼ 10-8S·cm-1. When the crystalline volume fraction (Fc) exceeds a certain percolation threshold, both α and σD increase abruptly. Undoped μc-Si:H films having Fc ∼ 94% exhibit a high magnitude of α ∼ 0.80 cm2·s-1 and a very high σD of ∼ 10-3 S·cm-1.

KW - Crystalline volume fraction

KW - Electrical conductivity

KW - Microcrystalline silicon thin film

KW - Thermal diffusivity

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DO - 10.1143/jjap.41.l229

M3 - Article

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SP - L229-L232

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 A

ER -

Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films

Abstract

Keywords

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