Correlation hard gap in antidot graphene

Jie Pan, Sheng-Shiuan Yeh, Haijing Zhang, David G. Rees, Ting Zhang, Bing Zhang, Juhn Jong Lin, Ping Sheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have measured low-temperature variation of resistance and nonlinear current-voltage behavior in antidot graphene in the vicinity of the charge neutrality point. The data are found to be consistent with the manifestations of a variable-range hopping electronic density of states (DOS) with a small hard gap of ∼1 meV around the Fermi level, in conjunction with a parallel tunneling conduction channel that exists at the center of the gap. The hard gap is confirmed by the appearance of a low-conductive plateau at low-bias electric field, whereas the parallel tunneling conduction channel, with temperature-independent conductance, is manifest through the nonlinear electric field variation. Unified good agreement between the temperature and electric field dependencies of conductance, for both channels, is obtained with the predictions of a proposed DOS model. An increase in the gap size with applied magnetic field is observed.

Original languageEnglish
Article number235114
JournalPhysical Review B
Issue number23
StatePublished - 15 Jun 2021


Dive into the research topics of 'Correlation hard gap in antidot graphene'. Together they form a unique fingerprint.

Cite this