Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices

Ming-Dou Ker; Chun Lin Hou; Chih Yih Chang; Fang Tsun Chu

doi:10.1109/IPFA.2004.1345598

Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices

Ming-Dou Ker^*, Chun Lin Hou, Chih Yih Chang, Fang Tsun Chu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

13 Scopus citations

Abstract

The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.

Original language	English
Pages	209-212
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2004.1345598
State	Published - 1 Dec 2004
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 5 Jul 2004 → 8 Jul 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	5/07/04 → 8/07/04

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10.1109/IPFA.2004.1345598

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Ker, M.-D., Hou, C. L., Chang, C. Y., & Chu, F. T. (2004). Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices. 209-212. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan. https://doi.org/10.1109/IPFA.2004.1345598

@conference{8684b070c4764bdc8d95b63e4b55468c,

title = "Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices",

abstract = "The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.",

author = "Ming-Dou Ker and Hou, {Chun Lin} and Chang, {Chih Yih} and Chu, {Fang Tsun}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/IPFA.2004.1345598",

language = "English",

pages = "209--212",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Ker, M-D, Hou, CL, Chang, CY & Chu, FT 2004, 'Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices', Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, 5/07/04 - 8/07/04 pp. 209-212. https://doi.org/10.1109/IPFA.2004.1345598

Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices. / Ker, Ming-Dou; Hou, Chun Lin; Chang, Chih Yih et al.
2004. 209-212 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices

AU - Ker, Ming-Dou

AU - Hou, Chun Lin

AU - Chang, Chih Yih

AU - Chu, Fang Tsun

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.

AB - The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.

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DO - 10.1109/IPFA.2004.1345598

M3 - Paper

AN - SCOPUS:14844325753

SP - 209

EP - 212

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices

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