Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

L. J. Palkuti; R. D. Ormond; Chen-Ming Hu; J. Chung

doi:10.1109/23.45416

Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

L. J. Palkuti, R. D. Ormond, Chen-Ming Hu, J. Chung

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A correlation between channel hot-carrier induced degradation in conventional-drain NMOSFETS and radiation-induced transconductance, gm, degradation is described. The device lifetime, τHE, after hot-carrier stressing was found to be τHE = A D1.5EFF, where DEFF is the radiation dose when Δgm/gm = 0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron device lifetime. The proposed radiation test can be applied to devices with both radiation-hard or radiation-soft field oxides.

Original language	English
Pages (from-to)	2140-2146
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	36
Issue number	6
DOIs	https://doi.org/10.1109/23.45416
State	Published - 1 Jan 1989

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abstract = "A correlation between channel hot-carrier induced degradation in conventional-drain NMOSFETS and radiation-induced transconductance, gm, degradation is described. The device lifetime, τHE, after hot-carrier stressing was found to be τHE = A D1.5EFF, where DEFF is the radiation dose when Δgm/gm = 0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron device lifetime. The proposed radiation test can be applied to devices with both radiation-hard or radiation-soft field oxides.",

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AU - Hu, Chen-Ming

AU - Chung, J.

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N2 - A correlation between channel hot-carrier induced degradation in conventional-drain NMOSFETS and radiation-induced transconductance, gm, degradation is described. The device lifetime, τHE, after hot-carrier stressing was found to be τHE = A D1.5EFF, where DEFF is the radiation dose when Δgm/gm = 0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron device lifetime. The proposed radiation test can be applied to devices with both radiation-hard or radiation-soft field oxides.

AB - A correlation between channel hot-carrier induced degradation in conventional-drain NMOSFETS and radiation-induced transconductance, gm, degradation is described. The device lifetime, τHE, after hot-carrier stressing was found to be τHE = A D1.5EFF, where DEFF is the radiation dose when Δgm/gm = 0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron device lifetime. The proposed radiation test can be applied to devices with both radiation-hard or radiation-soft field oxides.

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Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

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