Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

L. J. Palkuti, R. D. Ormond, Chen-Ming Hu, J. Chung

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A correlation between channel hot-carrier induced degradation in conventional-drain NMOSFETS and radiation-induced transconductance, gm, degradation is described. The device lifetime, τHE, after hot-carrier stressing was found to be τHE = A D1.5EFF, where DEFF is the radiation dose when Δgm/gm = 0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron device lifetime. The proposed radiation test can be applied to devices with both radiation-hard or radiation-soft field oxides.

Original languageEnglish
Pages (from-to)2140-2146
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume36
Issue number6
DOIs
StatePublished - 1 Jan 1989

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