Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms (Applied Physics A, (2023), 129, 2, (126), 10.1007/s00339-022-06332-z)

Po Yu Hong, Chin Hsuan Lin, I. Hsiang Wang, Yu Ju Chiu, Bing Ju Lee, Jiun Chi Kao, Chun Hao Huang, Horng Chih Lin, Thomas George, Pei Wen Li*

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Abstract

In this article, there were typographical errors. In third paragraph in Introduction section, “have thus far been demonstrated” should be deleted. The correct sentence is as follows. Thanks to the high absorption coefficients and pseudo-direct band-gap properties of Ge near the C-band communication wavelengths, active photonic devices (light sources and photodetectors) in Si PICs are enabled [2, 3] with small form factors on 2-D silicon-on-insulator (SOI) platforms. Moreover, at the end of third paragraph in “4.1 SiN‑embedded Ge‑QD microdisk light emitters”, unnecessary "Ge QD SiN silicon oxide air" has been remained. That should be deleted. The original article has been corrected.

Original languageEnglish
Article number156
JournalApplied Physics A: Materials Science and Processing
Volume129
Issue number2
DOIs
StatePublished - Feb 2023

Fingerprint

Dive into the research topics of 'Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms (Applied Physics A, (2023), 129, 2, (126), 10.1007/s00339-022-06332-z)'. Together they form a unique fingerprint.

Cite this