Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures

Han Yu Chen*, Kang Ping Peng, Thomas George, Horng-Chih Lin, Pei-Wen Li

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We report a novel self-organized approach for the controllable placement of paired Ge quantum dots (QDs) along each sidewall edge of poly-Si ridges by simply thermally oxidizing spacer layers of poly-SiGe and Si3N4 that conformally encapsulate the poly-Si ridges. Additionally, controllable diameters ranging from 20-50 nm and precise location of paired Ge QDs are enabled by adjusting the thickness of poly-SiGe spacer layers in combination with specific processing conditions. These conditions include the subsequent lithographic patterning through direct etch-back for forming spacer stripes and spacer islands. The spacing between paired Ge QDs across the ridge is essentially determined by the width of the patterned poly-Si ridge. Inter-QD spacings along the sidewall of the poly-Si ridge are a consequence of heterogeneous nucleation and Ostwald Ripening.

    Original languageAmerican English
    Article number9088228
    Pages (from-to)436-438
    Number of pages3
    JournalIEEE Transactions on Nanotechnology
    Volume19
    DOIs
    StatePublished - 2020

    Keywords

    • Germanium
    • interstitial diffusion
    • quantum dot
    • selective oxidation

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