Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, Gabriel Gebara, Michael Freiler, Joel Barnett, Deborah Riley, Jerry Chen, Kenneth Torres, Jae Eun Lim, Brendan Foran, Fred Shaapur, Avinash Agarwal, Patrick Lysaght, George A. Brown, Chadwin Young, Swarnal Borthakur, Hong Jyh Li, Billy Nguyen, Peter Zeitzoff, Gennadi Bersuker, David DerroRenate Bergmann, Robert W. Murto, Tuo-Hung Hou, Howard R. Huff, Eric Shero^*, Christophe Pomarede, Michael Givens, Mike Mazanec, Chris Werkhoven

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

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Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode

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Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode

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Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode