Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim; Gabriel Gebara; Michael Freiler; Joel Barnett; Deborah Riley; Jerry Chen; Kenneth Torres; Jae Eun Lim; Brendan Foran; Fred Shaapur; Avinash Agarwal; Patrick Lysaght; George A. Brown; Chadwin Young; Swarnal Borthakur; Hong Jyh Li; Billy Nguyen; Peter Zeitzoff; Gennadi Bersuker; David Derro; Renate Bergmann; Robert W. Murto; Tuo-Hung Hou; Howard R. Huff; Eric Shero; Christophe Pomarede; Michael Givens; Mike Mazanec; Chris Werkhoven

doi:10.1109/IEDM.2001.979538

Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, Gabriel Gebara, Michael Freiler, Joel Barnett, Deborah Riley, Jerry Chen, Kenneth Torres, Jae Eun Lim, Brendan Foran, Fred Shaapur, Avinash Agarwal, Patrick Lysaght, George A. Brown, Chadwin Young, Swarnal Borthakur, Hong Jyh Li, Billy Nguyen, Peter Zeitzoff, Gennadi Bersuker, David DerroRenate Bergmann, Robert W. Murto, Tuo-Hung Hou, Howard R. Huff, Eric Shero^*, Christophe Pomarede, Michael Givens, Mike Mazanec, Chris Werkhoven

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

95 Scopus citations

Abstract

Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO₂/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO₂/Poly-Si transistors.

Original language	English
Pages (from-to)	455-458
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979538
State	Published - 1 Dec 2001
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001

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Kim, Y., Gebara, G., Freiler, M., Barnett, J., Riley, D., Chen, J., Torres, K., Lim, J. E., Foran, B., Shaapur, F., Agarwal, A., Lysaght, P., Brown, G. A., Young, C., Borthakur, S., Li, H. J., Nguyen, B., Zeitzoff, P., Bersuker, G., ... Werkhoven, C. (2001). Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode. Technical Digest - International Electron Devices Meeting, 455-458. https://doi.org/10.1109/IEDM.2001.979538

@article{afe28483671e4693a149d2308876bc41,

title = "Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode",

abstract = "Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO2/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO2/Poly-Si transistors.",

author = "Yudong Kim and Gabriel Gebara and Michael Freiler and Joel Barnett and Deborah Riley and Jerry Chen and Kenneth Torres and Lim, {Jae Eun} and Brendan Foran and Fred Shaapur and Avinash Agarwal and Patrick Lysaght and Brown, {George A.} and Chadwin Young and Swarnal Borthakur and Li, {Hong Jyh} and Billy Nguyen and Peter Zeitzoff and Gennadi Bersuker and David Derro and Renate Bergmann and Murto, {Robert W.} and Tuo-Hung Hou and Huff, {Howard R.} and Eric Shero and Christophe Pomarede and Michael Givens and Mike Mazanec and Chris Werkhoven",

year = "2001",

month = dec,

day = "1",

doi = "10.1109/IEDM.2001.979538",

language = "English",

pages = "455--458",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

Kim, Y, Gebara, G, Freiler, M, Barnett, J, Riley, D, Chen, J, Torres, K, Lim, JE, Foran, B, Shaapur, F, Agarwal, A, Lysaght, P, Brown, GA, Young, C, Borthakur, S, Li, HJ, Nguyen, B, Zeitzoff, P, Bersuker, G, Derro, D, Bergmann, R, Murto, RW, Hou, T-H, Huff, HR, Shero, E, Pomarede, C, Givens, M, Mazanec, M & Werkhoven, C 2001, 'Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode', Technical Digest - International Electron Devices Meeting, pp. 455-458. https://doi.org/10.1109/IEDM.2001.979538

TY - JOUR

T1 - Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode

AU - Kim, Yudong

AU - Gebara, Gabriel

AU - Freiler, Michael

AU - Barnett, Joel

AU - Riley, Deborah

AU - Chen, Jerry

AU - Torres, Kenneth

AU - Lim, Jae Eun

AU - Foran, Brendan

AU - Shaapur, Fred

AU - Agarwal, Avinash

AU - Lysaght, Patrick

AU - Brown, George A.

AU - Young, Chadwin

AU - Borthakur, Swarnal

AU - Li, Hong Jyh

AU - Nguyen, Billy

AU - Zeitzoff, Peter

AU - Bersuker, Gennadi

AU - Derro, David

AU - Bergmann, Renate

AU - Murto, Robert W.

AU - Hou, Tuo-Hung

AU - Huff, Howard R.

AU - Shero, Eric

AU - Pomarede, Christophe

AU - Givens, Michael

AU - Mazanec, Mike

AU - Werkhoven, Chris

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO2/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO2/Poly-Si transistors.

AB - Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO2/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO2/Poly-Si transistors.

UR - http://www.scopus.com/inward/record.url?scp=0035718371&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979538

DO - 10.1109/IEDM.2001.979538

M3 - Conference article

AN - SCOPUS:0035718371

SN - 0163-1918

SP - 455

EP - 458

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Conventional n-channel MOSFET devices using single layer HfO₂ and ZrO₂ as high-k gate dielectrics with polysilicon gate electrode

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