Conventional III-V Materials and Devices on Silicon

Edward Yi Chang

doi:10.1201/b10390-17

Conventional III-V Materials and Devices on Silicon

Edward Yi Chang^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Materials with high channel mobility are essential as silicon CMOS technology approaches the 30 nm node and beyond. III-V compound semiconductors, with their high mobility and drift velocity under the influence of low electric field, are considered the most promising materials to realize nextgeneration nanoelectronic applications. Table 13.1 compares relevant channel material properties of Si, Ge, and main III-V semiconductors [Takagi 2008].

Original language	English
Title of host publication	III-V Compound Semiconductors
Subtitle of host publication	Integration with Silicon-Based Microelectronics
Publisher	CRC Press
Pages	475-522
Number of pages	48
ISBN (Electronic)	9781439815236
ISBN (Print)	9780367383268
DOIs	https://doi.org/10.1201/b10390-17
State	Published - 1 Jan 2016

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abstract = "Materials with high channel mobility are essential as silicon CMOS technology approaches the 30 nm node and beyond. III-V compound semiconductors, with their high mobility and drift velocity under the influence of low electric field, are considered the most promising materials to realize nextgeneration nanoelectronic applications. Table 13.1 compares relevant channel material properties of Si, Ge, and main III-V semiconductors [Takagi 2008].",

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AB - Materials with high channel mobility are essential as silicon CMOS technology approaches the 30 nm node and beyond. III-V compound semiconductors, with their high mobility and drift velocity under the influence of low electric field, are considered the most promising materials to realize nextgeneration nanoelectronic applications. Table 13.1 compares relevant channel material properties of Si, Ge, and main III-V semiconductors [Takagi 2008].

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Conventional III-V Materials and Devices on Silicon

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