Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature

Wei Lee; Pin Su; Hou Yu Chen; Yun Chang; Ke Wei Su; Sally Liu; Fu Liang Yang

doi:10.1109/SOI.2006.284434

Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature

Wei Lee^*, Pin Su, Hou Yu Chen, Yun Chang, Ke Wei Su, Sally Liu, Fu Liang Yang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2006 IEEE international SOI Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	63-64
Number of pages	2
ISBN (Print)	1424402905, 9781424402908
DOIs	https://doi.org/10.1109/SOI.2006.284434
State	Published - 2006
Event	2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States Duration: 2 Oct 2006 → 5 Oct 2006

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2006 IEEE International Silicon on Insulator Conference, SOI
Country/Territory	United States
City	Niagara Falls, NY
Period	2/10/06 → 5/10/06

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10.1109/SOI.2006.284434

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Lee, W., Su, P., Chen, H. Y., Chang, Y., Su, K. W., Liu, S., & Yang, F. L. (2006). Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature. In 2006 IEEE international SOI Conference Proceedings (pp. 63-64). Article 4062882 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.2006.284434

@inproceedings{cb6fdc3f8e8a4a78b4ae8bbf3af04dbf,

title = "Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature",

author = "Wei Lee and Pin Su and Chen, {Hou Yu} and Yun Chang and Su, {Ke Wei} and Sally Liu and Yang, {Fu Liang}",

year = "2006",

doi = "10.1109/SOI.2006.284434",

language = "English",

isbn = "1424402905",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "63--64",

booktitle = "2006 IEEE international SOI Conference Proceedings",

address = "美國",

note = "2006 IEEE International Silicon on Insulator Conference, SOI ; Conference date: 02-10-2006 Through 05-10-2006",

}

Lee, W, Su, P, Chen, HY, Chang, Y, Su, KW, Liu, S & Yang, FL 2006, Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature. in 2006 IEEE international SOI Conference Proceedings., 4062882, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 63-64, 2006 IEEE International Silicon on Insulator Conference, SOI, Niagara Falls, NY, United States, 2/10/06. https://doi.org/10.1109/SOI.2006.284434

Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature. / Lee, Wei; Su, Pin; Chen, Hou Yu et al.
2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2006. p. 63-64 4062882 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature

AU - Lee, Wei

AU - Su, Pin

AU - Chen, Hou Yu

AU - Chang, Yun

AU - Su, Ke Wei

AU - Liu, Sally

AU - Yang, Fu Liang

PY - 2006

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DO - 10.1109/SOI.2006.284434

M3 - Conference contribution

AN - SCOPUS:43749085531

SN - 1424402905

SN - 9781424402908

T3 - Proceedings - IEEE International SOI Conference

SP - 63

EP - 64

BT - 2006 IEEE international SOI Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 IEEE International Silicon on Insulator Conference, SOI

Y2 - 2 October 2006 through 5 October 2006

ER -

Controlled single-electron effects in multiple-gate SOI MOSFETs near room temperature

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