TY - JOUR
T1 - Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
AU - Chandrasekaran, Sridhar
AU - Simanjuntak, Firman Mangasa
AU - Tseng, Tseung-Yuen
N1 - Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.
AB - The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.
UR - http://www.scopus.com/inward/record.url?scp=85044471019&partnerID=8YFLogxK
U2 - 10.7567/JJAP.57.04FE10
DO - 10.7567/JJAP.57.04FE10
M3 - Article
AN - SCOPUS:85044471019
SN - 0021-4922
VL - 57
SP - 1
EP - 4
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4S
M1 - 04FE10
ER -