Controlled functionalization of a double-junction n+/n-/n+ polysilicon nanobelt for hydrogen sensing application

Nhan Ai Tran, Chen Hsiang Sang, Fu-Ming Pan, Jeng-Tzong Sheu

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3 Scopus citations

Abstract

In this paper, a double-junction n+/n-/n+ polysilicon nanobelt selectively functionalized with platinum has been studied for hydrogen sensing application. The selective modification of the devices is performed by the combination of localized ablation of a resist and a lift-off process of e-beam evaporation of a catalyst material. The coverage of a Pt layer on the n- region is precisely controlled by adjusting Joule heating bias and pulse length. The Pt-functionalized devices show a rapid response to hydrogen with a limit of detection of only 5 ppm. The device with fully Ptcovered n- region is optimum for obtaining the best response to hydrogen.

Original languageEnglish
Article number04EM01
JournalJapanese journal of applied physics
Volume55
Issue number4
DOIs
StatePublished - Apr 2016

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